Star Photonics | FABRICATION

SERVICES → FABRICATION

Star Photonics® team can fabricate a prototype of your circuits in, among others, Silicon, insulators and 3D platforms.

We are licensed to work, mainly, at various facilities in Israel (such as TAU Nano Center and BINA) and are experienced to manufacture a prototype at standards higher than academic level. We deal mainly with chip architecture comprising of optical devices (cm-to-nm range), micro-electronics devices and electro-optical (integrated electronics with optics) devices. We can also do standard packaging of the chip including input/output ports.

Our expertise is in standard photolithography, Electron Beam lithography (E-Beam) and 3D printing lithography. Masks and blueprints are designed by software such as CleWin©, Raith© and SolidWork© editors. This allows fabrication of optical elements at the nanoscale range and microelectronics of shallow junction architecture.

Following are some of the elements that we specialized at process engineering and fabrication:

Ring/Racetrack resonators, Fabry-Perot resonators, Photonic Crystal resonators, Mach-Zehnder Interferometers,

Y-couplers, Directional Couplers, Tapers and other similar elements of the Integrated Optics family.

BRAGG reflectors made of tandem layers or of waveguide corrugations (tapered gratings).
PN/PIN diodes, MOS capacitors, BJT and FET transistors.
Optical filters and sensors.
Electro-optical modulators supporting RF operation (switching rate of 25GHz for regular 50Ω line).
3D structures via Two-Photon absorption technology for resin polymerization (3D Printing)
Silicon Germanium components: Laser, LED, Optical Amplifier (SOA), Photodetector (PD), active/passive components.

Photonic Crystal 2D Photonic Crystal in Silicon Photonics platform. The device is a nano-structure lattice with holes diameter of 200nm.	Microring Resonator Microring Resonator in Silicon Photonics platform. This device is commonly used as a narrow band filter or as an element of an Electro-Optical modulator. The ring diameter is 18 micron and the waveguide width is 400nm.
Racetrack Resonator Micron size Racetrack Resonator in Silicon Photonics platform. This device is commonly used as a narrow band filter or as an element of an Electro-Optical modulator. In this configuration (two bus waveguides) the device can also be used as an Add Drop Filter (ADF). The racetrack perimeter is 100 micron and the coupling gap is 200nm.	Photonic Crystal Resonator 2D Photonic Crystal Resonator in Silicon Photonics platform. This device is commonly used as a narrow band filter or as an element of an Electro-Optical modulator. It also provides larger FSR than typical resonators such as ring or fabry-perot resonators. The cavity size is 1.5x0.5 micron. It is a nano-structure lattice with holes diameter of 200nm.
Y Coupler, 3dB Optical Splitter Y Coupler in Silicon Photonics platform. This device is commonly used as an optical splitter. The coupler splits the optical input power into two equal and separated optical output powers.	Directional Coupler Directional Coupler (DC) in Silicon Photonics platform. This device is commonly used as an optical splitter. The coupler splits the optical input power into two separated optical output powers. The power exchange between the two adjacent waveguides depends mostly on the length of the straight waveguides. It is possible to obtain full power transfer.
Fabrication 7.png Micron size Racetrack Resonator in Silicon Photonics platform. This device is commonly used as a narrow band filter or as an element of an Electro-Optical modulator. The racetrack perimeter is 100 micron and the coupling gap is 200nm. The interaction length is 5micron.	Electro-optical circuit Add Drop Filter (ADF) Electro-Optical filter circuit in Silicon Photonics platform.
Si-Ge Lasers on SOI Measurements of Silicon Germanium lasers and LEDs on-chip for Silicon Photonics on SOI substrate.	PN and PIN Diodes PN and PIN Silicon Diodes in SOI platform. The intrinsic region length is 3 micron. The diodes are presented at stage prior to annealing process. They are used as an electrical control in an Electro-Optical modulator.
PN and PIN Diodes PN and PIN Silicon Diodes in SOI platform. The intrinsic region length is 5 micron. The diode is presented at stage prior to annealing process. It is used as a test diode for the electrical control in an Electro-Optical modulator.	MOS capacitors for Silicon Photonics Silicon MOS Capacitor in SOI platform. The capacitor supports RF operation around 20 GHz and designed with G-S-G input. It is used as a test capacitor for the electrical control in an Electro-Optical modulator.
Silicon Photonics chip with EO modulators Measurement Tips touch the pads of an electrical circuit driving an Electro-Optical modulator in Silicon Photonics platform.

SERVICES → FABRICATION

Photonic Crystal

2D Photonic Crystal in Silicon Photonics platform. The device is a nano-structure lattice with holes diameter of 200nm.

Microring Resonator

Microring Resonator in Silicon Photonics platform. This device is commonly used as a narrow band filter or as an element of an Electro-Optical modulator. The ring diameter is 18 micron and the waveguide width is 400nm.

Racetrack Resonator

Photonic Crystal Resonator

Y Coupler, 3dB Optical Splitter

Y Coupler in Silicon Photonics platform. This device is commonly used as an optical splitter. The coupler splits the optical input power into two equal and separated optical output powers.

Directional Coupler

Fabrication 7.png

Micron size Racetrack Resonator in Silicon Photonics platform. This device is commonly used as a narrow band filter or as an element of an Electro-Optical modulator. The racetrack perimeter is 100 micron and the coupling gap is 200nm. The interaction length is 5micron.

Electro-optical circuit

Add Drop Filter (ADF) Electro-Optical filter circuit in Silicon Photonics platform.

Si-Ge Lasers on SOI

Measurements of Silicon Germanium lasers and LEDs on-chip for Silicon Photonics on SOI substrate.

PN and PIN Diodes

PN and PIN Silicon Diodes in SOI platform. The intrinsic region length is 3 micron. The diodes are presented at stage prior to annealing process. They are used as an electrical control in an Electro-Optical modulator.

PN and PIN Diodes

PN and PIN Silicon Diodes in SOI platform. The intrinsic region length is 5 micron. The diode is presented at stage prior to annealing process. It is used as a test diode for the electrical control in an Electro-Optical modulator.

MOS capacitors for Silicon Photonics

Silicon MOS Capacitor in SOI platform. The capacitor supports RF operation around 20 GHz and designed with G-S-G input. It is used as a test capacitor for the electrical control in an Electro-Optical modulator.

Silicon Photonics chip with EO modulators

Measurement Tips touch the pads of an electrical circuit driving an Electro-Optical modulator in Silicon Photonics platform.